Electronic Effects of Peripheral Substituents on the Structural Stability of Polyhedral Oligomeric Silsesquioxanes (POSS): A DFT Study

Authors

  • Laurent Ngalamulume Lumu Departement de Chimie, Faculté des Sciences, Université de Kinshasa, République Démocratique du Congo Author
  • Christian Tshikala Mukeba Departement de Chimie, Faculté des Sciences, Université de Kinshasa, République Démocratique du Congo Author
  • Jules Tshishimbi Muya Departement de Chimie, Faculté des Sciences, Université de Kinshasa, République Démocratique du Congo Author

Keywords:

Polyhedral oligomeric silsesquioxane (POSS), DFT, Thermodynamic Stability, HOMO–LUMO Gap

Abstract

Polyhedral oligomeric silsesquioxanes (POSS) represent a fundamental class of organic–inorganic hybrid nanostructures. However, a comprehensive understanding of how peripheral electronic effects modulate the intrinsic stability of the inorganic cage remains lacking. Herein, a systematic Density Functional Theory (DFT) study of octafunctionalized derivatives Si₈R₈O₁₂ (R = Cl, CF₃, OH, NH₂, COOH, and OCH₃) was performed at the B3LYP/6-311+G(d) level. Structural parameters, electronic descriptors, and thermodynamic stabilities were systematically evaluated. Strong electron-withdrawing groups (Cl, CF₃, and COOH) induce framework contraction and enhance thermodynamic cage stabilization. HOMO-LUMO gaps, isodesmic stabilization energies (ISE), and $\text{NICS}(0)$ values demonstrate high electronic robustness and non-aromatic character. High-level G3B3 thermochemical calculations on Si₈H₈O₁₂, Si₈Li₈O₁₂, and Si₈F₈O₁₂ establish the stability order: Si₈F₈O₁₂ > Si₈H₈O₁₂ > Si₈Li₈O₁₂. These insights offer precise design guidelines for tailoring novel functional hybrid materials.

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Published

2026-09-03

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